PDTC114YQAZ

Teknik Özellikler

Current Collector Cutoff Max

1μA

Resistor Emitter Base R2

47 k Ω

Pin Sayısı

3

Dc Current Gain Hfe Min Ic Vce

100 @ 5mA 5V

Seri

Automotive, AEC-Q101

Max Power Dissipation

280mW

Transistor Type

NPN - Pre-Biased

Reference Standard

AEC-Q101; IEC-60134

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Kılıf / Paket

3-XDFN Exposed Pad

Collector Emitter Voltage Vceo

100mV

Collectoremitter Breakdown Voltage

50V

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Frequency Transition

230MHz

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Parça Durumu

Active

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Power Max

280mW

Fabrika Tedarik Süresi

4 Weeks

Polaritychannel Type

NPN

Case Connection

COLLECTOR

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-N3

Max Collector Current

100mA

Montaj

Surface Mount

Transistor Application

SWITCHING

Terminal Formu

NO LEAD

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

Resistor Base R1

10 k Ω

Transition Frequency

230MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)