PDTC114EQC-QZ

Teknik Özellikler

Transistor Type

NPN - Pre-Biased

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Typical Resistor Ratio

1

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA, 5V

Seri

Automotive, AEC-Q101

Resistor Emitter Base R2

10 kOhms

Current Collector Cutoff Max

100nA

Dc Collectorbase Gain Hfe Min

30 at 5 mA, 5 V

Kılıf / Paket

3-XDFN Exposed Pad

Maks. Çalışma Sıcaklığı

+ 150 C

Part Aliases

934663498147

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Package Type

DFN1412D-3

Frequency Transition

230 MHz

Ambalaj

MouseReel

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank

Number Of Elements Per Chip

3

Collector Emitter Voltage Vceo Max

50 V

Fabrika Paket Adedi

5000

Power Max

360 mW

RoHS

Details

Voltage Collector Emitter Breakdown Max

50 V

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Pd Power Dissipation

450 mW

Minimum Operating Temperature

- 55 C

Continuous Collector Current

100mA

Tedarikçi Cihaz Paketi

DFN1412D-3

Typical Input Resistor

10 kOhms

Transistor Polarity

Single NPN

Maximum Dc Collector Current

100 mA

Resistor Base R1

10 kOhms

Maximum Collector Emitter Voltage

50 V

Power Dissipation

360mW

Configuration

Single

Emitter Base Voltage Vebo

10 V

Qualification

AEC-Q101