Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA, 5V
- Transistor Type
- PNP - Pre-Biased
- Current Collector Cutoff Max
- 100nA
- Voltage Collector Emitter Breakdown Max
- 50 V
- Resistor Emitter Base R2
- 10 kOhms
- Ürün Durumu
- Active
- Currentcollector Ic Max
- 100 mA
- Continuous Collector Current
- 100mA
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Resistor Base R1
- 10 kOhms
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Package Type
- DFN1110D-3
- Transistor Polarity
- Single NPN
- Maximum Dc Collector Current
- 100 mA
- Montaj Tipi
- Surface Mount, Wettable Flank
- Frequency Transition
- 180 MHz
- Maximum Collector Emitter Voltage
- 50 V
- Power Dissipation
- 340mW
- Power Max
- 340 mW
- Number Of Elements Per Chip
- 3
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