PDTC114EQAZ

Teknik Özellikler

Kılıf / Paket

3-XDFN Exposed Pad

Reference Standard

AEC-Q101; IEC-60134

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Collector Emitter Voltage Vceo

150mV

Collectoremitter Breakdown Voltage

50V

Pin Sayısı

3

Resistor Emitter Base R2

10 k Ω

Current Collector Cutoff Max

1μA

Max Power Dissipation

280mW

Transistor Type

NPN - Pre-Biased

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Seri

Automotive, AEC-Q101

Fabrika Tedarik Süresi

4 Weeks

Power Max

280mW

Polaritychannel Type

NPN

Frequency Transition

230MHz

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2011

Parça Durumu

Active

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Number Of Elements

1

Max Collector Current

100mA

Montaj

Surface Mount

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Terminal Formu

NO LEAD

Case Connection

COLLECTOR

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-N3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transition Frequency

230MHz

Resistor Base R1

10 k Ω