PDTB123YUF

Teknik Özellikler

Yayın Yılı

2014

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Parça Durumu

Active

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Frequency Transition

140MHz

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Polaritychannel Type

PNP

Fabrika Tedarik Süresi

4 Weeks

Power Max

300mW

Transistor Type

NPN - Pre-Biased

Max Power Dissipation

300mW

Pin Sayısı

3

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Resistor Emitter Base R2

10 k Ω

Pin Sayısı

3

Current Collector Cutoff Max

500nA

Collectoremitter Breakdown Voltage

50V

Collector Emitter Voltage Vceo

100mV

Kılıf / Paket

SC-70, SOT-323

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.55

Transition Frequency

140MHz

Resistor Base R1

2.2 k Ω

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Max Collector Current

500mA

Montaj

Surface Mount