PDTB123EQAZ

Teknik Özellikler

Collector Emitter Voltage Vceo

100mV

Collectoremitter Breakdown Voltage

50V

Reference Standard

AEC-Q101; IEC-60134

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Kılıf / Paket

3-XDFN Exposed Pad

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

40 @ 50mA 5V

Max Power Dissipation

325mW

Transistor Type

PNP - Pre-Biased

Current Collector Cutoff Max

500nA

Resistor Emitter Base R2

2.2 k Ω

Pin Sayısı

3

Polaritychannel Type

PNP

Power Max

325mW

Fabrika Tedarik Süresi

4 Weeks

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Parça Durumu

Active

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Frequency Transition

150MHz

Ambalaj

Tape & Reel (TR)

Terminal Formu

NO LEAD

Ürün Durumu

Active

Terminal Pozisyonu

DUAL

Continuous Collector Current

500

Max Collector Current

500mA

Montaj

Surface Mount

Paket

Bulk

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-N3

Case Connection

COLLECTOR

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Base R1

2.2 k Ω

Transistor Polarity

NPN

Transition Frequency

150MHz