PDTB114EQAZ

Teknik Özellikler

Polaritychannel Type

PNP

Number Of Macrocells

1

Fabrika Tedarik Süresi

4 Weeks

Power Max

325mW

Çalışma Sıcaklığı

-40°C ~ 105°C (TA)

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Parça Durumu

Active

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Ambalaj

Tape & Reel (TR)

Frequency Transition

150MHz

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Voltage Supply Internal

1.71V ~ 3.6V

Collectoremitter Breakdown Voltage

50V

Collector Emitter Voltage Vceo

100mV

Kılıf / Paket

3-XDFN Exposed Pad

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Reference Standard

AEC-Q101; IEC-60134

Transistor Type

PNP - Pre-Biased

Max Power Dissipation

325mW

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

70 @ 50mA 5V

Resistor Emitter Base R2

10 k Ω

Pin Sayısı

3

Current Collector Cutoff Max

500nA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transition Frequency

150MHz

Resistor Base R1

10 k Ω

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Number Of Gates

2

Terminal Pozisyonu

DUAL

Ürün Durumu

Active

Terminal Formu

NO LEAD

Number Of Ios

17

Paket

Tape & Reel (TR)

Transistor Application

SWITCHING