PDTB113EQAZ

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transition Frequency

150MHz

Resistor Base R1

1 k Ω

Transistor Application

SWITCHING

Montaj

Surface Mount

Max Collector Current

500mA

Terminal Pozisyonu

DUAL

Terminal Formu

NO LEAD

RoHS Durumu

ROHS3 Compliant

Case Connection

COLLECTOR

Jesd30 Code

R-PDSO-N3

Fabrika Tedarik Süresi

4 Weeks

Power Max

325mW

Polaritychannel Type

PNP

Ambalaj

Tape & Reel (TR)

Frequency Transition

150MHz

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Parça Durumu

Active

Number Of Elements

1

Kılıf / Paket

3-XDFN Exposed Pad

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Reference Standard

AEC-Q101; IEC-60134

Collectoremitter Breakdown Voltage

50V

Collector Emitter Voltage Vceo

100mV

Resistor Emitter Base R2

1 k Ω

Pin Sayısı

3

Current Collector Cutoff Max

500nA

Transistor Type

PNP - Pre-Biased

Max Power Dissipation

325mW

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

33 @ 50mA 5V