PDTA143XQC-QZ

Teknik Özellikler

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

3-XDFN Exposed Pad

Dc Collectorbase Gain Hfe Min

50 at - 10 mA, - 5 V

Current Collector Cutoff Max

100nA

Resistor Emitter Base R2

10 kOhms

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

50 @ 10mA, 5V

Typical Resistor Ratio

2.13

Transistor Type

PNP - Pre-Biased

Power Max

360 mW

Fabrika Paket Adedi

5000

Collector Emitter Voltage Vceo Max

- 50 V

Number Of Elements Per Chip

3

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank

Frequency Transition

180 MHz

Ambalaj

MouseReel

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Package Type

DFN1412D-3

Part Aliases

934663492147

Continuous Collector Current

100mA

Typical Input Resistor

4.7 kOhms, 10 kOhms

Tedarikçi Cihaz Paketi

DFN1412D-3

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

450 mW

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Voltage Collector Emitter Breakdown Max

50 V

RoHS

Details

Qualification

AEC-Q101

Emitter Base Voltage Vebo

- 7 V

Configuration

Single

Maximum Collector Emitter Voltage

-50 V

Power Dissipation

360mW

Resistor Base R1

4.7 kOhms

Maximum Dc Collector Current

100 mA

Transistor Polarity

Single PNP