PDTA143EQC-QZ

Teknik Özellikler

Collector Emitter Voltage Vceo Max

- 50 V

Number Of Elements Per Chip

3

Power Max

360 mW

Fabrika Paket Adedi

5000

Ambalaj

MouseReel

Frequency Transition

180 MHz

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank

Part Aliases

934663488147

Package Type

DFN1412D-3

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Kılıf / Paket

3-XDFN Exposed Pad

Maks. Çalışma Sıcaklığı

+ 150 C

Resistor Emitter Base R2

4.7 kOhms

Dc Collectorbase Gain Hfe Min

30 at - 10 mA, - 5 V

Current Collector Cutoff Max

100nA

Transistor Type

PNP - Pre-Biased

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA, 5V

Typical Resistor Ratio

1

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Qualification

AEC-Q101

Emitter Base Voltage Vebo

- 10 V

Power Dissipation

360mW

Maximum Collector Emitter Voltage

-50 V

Configuration

Single

Transistor Polarity

Single PNP

Maximum Dc Collector Current

100 mA

Resistor Base R1

4.7 kOhms

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

450 mW

Typical Input Resistor

4.7 kOhms

Tedarikçi Cihaz Paketi

DFN1412D-3

Continuous Collector Current

100mA

Ürün Durumu

Active

Currentcollector Ic Max

100 mA

Voltage Collector Emitter Breakdown Max

50 V

RoHS

Details