PDTA124XQCZ

Teknik Özellikler

Maximum Collector Emitter Voltage

-50 V

Configuration

Single

Transistor Polarity

PNP

Maximum Dc Collector Current

100 mA

Resistor Base R1

22 kOhms

Emitter Base Voltage Vebo

- 7 V

Voltage Collector Emitter Breakdown Max

50 V

RoHS

Details

Pd Power Dissipation

450 mW

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

DFN1412D-3

Typical Input Resistor

22 kOhms, 47 kOhms

Continuous Collector Current

- 100 mA

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Ambalaj

MouseReel

Frequency Transition

180 MHz

Montaj Tipi

Surface Mount, Wettable Flank

Montaj Stili

SMD/SMT

Part Aliases

934662958147

Package Type

DFN1412D-3

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Collector Emitter Voltage Vceo Max

- 50 V

Number Of Elements Per Chip

3

Power Max

360 mW

Fabrika Paket Adedi

5000

Resistor Emitter Base R2

47 kOhms

Current Collector Cutoff Max

100nA

Dc Collectorbase Gain Hfe Min

80 at - 5 mA, - 5 V

Transistor Type

PNP - Pre-Biased

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA, 5V

Typical Resistor Ratio

2.13

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Kılıf / Paket

3-XDFN Exposed Pad

Maks. Çalışma Sıcaklığı

+ 150 C