PDTA124XQBZ

Teknik Özellikler

RoHS

Details

Voltage Collector Emitter Breakdown Max

50 V

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Continuous Collector Current

100mA

Tedarikçi Cihaz Paketi

DFN1110D-3

Resistor Base R1

22 kOhms

Maximum Dc Collector Current

100 mA

Transistor Polarity

Single PNP

Power Dissipation

340mW

Maximum Collector Emitter Voltage

-50 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA, 5V

Transistor Type

PNP - Pre-Biased

Current Collector Cutoff Max

100nA

Resistor Emitter Base R2

47 kOhms

Kılıf / Paket

3-XDFN Exposed Pad

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Package Type

DFN1110D-3

Part Aliases

934662599147

Montaj Tipi

Surface Mount, Wettable Flank

Frequency Transition

180 MHz

Ambalaj

MouseReel

Fabrika Paket Adedi

5000

Power Max

340 mW

Number Of Elements Per Chip

3