PDTA124XQB-QZ

Teknik Özellikler

Ürün Durumu

Active

Currentcollector Ic Max

100 mA

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

420 mW

Continuous Collector Current

100mA

Typical Input Resistor

22 kOhms, 47 kOhms

Tedarikçi Cihaz Paketi

DFN1110D-3

RoHS

Details

Voltage Collector Emitter Breakdown Max

50 V

Emitter Base Voltage Vebo

- 7 V

Qualification

AEC-Q101

Maximum Dc Collector Current

100 mA

Transistor Polarity

Single PNP

Resistor Base R1

22 kOhms

Power Dissipation

340mW

Maximum Collector Emitter Voltage

-50 V

Configuration

Single

Kılıf / Paket

3-XDFN Exposed Pad

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Type

PNP - Pre-Biased

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA, 5V

Typical Resistor Ratio

2.13

Resistor Emitter Base R2

47 kOhms

Dc Collectorbase Gain Hfe Min

80 at - 5 mA, - 5 V

Current Collector Cutoff Max

100nA

Number Of Elements Per Chip

3

Collector Emitter Voltage Vceo Max

- 50 V

Fabrika Paket Adedi

5000

Power Max

340 mW

Part Aliases

934663478147

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Package Type

DFN1110D-3

Frequency Transition

180 MHz

Ambalaj

MouseReel

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank