PDTA124EQB-QZ

Teknik Özellikler

Tedarikçi Cihaz Paketi

DFN1110D-3

Typical Resistor Ratio

1

Minimum Operating Temperature

- 55 C

Emitter Base Voltage Vebo

- 10 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Ürün Durumu

Active

Transistor Type

PNP - Pre-Biased

Power Dissipation

340mW

Resistor Emitter Base R2

22 kOhms

Fabrika Paket Adedi

5000

Configuration

Single

Voltage Collector Emitter Breakdown Max

50 V

Montaj Stili

SMD/SMT

Resistor Base R1

22 kOhms

Current Collector Cutoff Max

100nA

Power Max

340 mW

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA, 5V

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Maximum Collector Emitter Voltage

-50 V

Qualification

AEC-Q101

Ambalaj

MouseReel

Montaj Tipi

Surface Mount, Wettable Flank

Pd Power Dissipation

420 mW

Currentcollector Ic Max

100 mA

Kılıf / Paket

3-XDFN Exposed Pad

Typical Input Resistor

22 kOhms

Continuous Collector Current

100mA

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements Per Chip

3

Collector Emitter Voltage Vceo Max

- 50 V

Transistor Polarity

Single PNP

RoHS

Details

Dc Collectorbase Gain Hfe Min

60 at - 5 mA, - 5 V

Package Type

DFN1110D-3

Maximum Dc Collector Current

100 mA

Frequency Transition

180 MHz

Part Aliases

934663472147

Seri

Automotive, AEC-Q101