PDTA123ETVL

Teknik Özellikler

Resistor Emitter Base R2

2.2 k Ω

RoHS Durumu

ROHS3 Compliant

Ürün Durumu

Active

Power Dissipation

150

Transistor Type

PNP - Pre-Biased

Fabrika Tedarik Süresi

4 Weeks

Yüzey Montaj

YES

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA

Dc Current Gain Hfe Min Ic Vce

30 @ 20mA 5V

Parça Durumu

Active

Current Collector Cutoff Max

1μA

Resistor Base R1

2.2 k Ω

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

Paket

Box

Pin Sayısı

3

Continuous Collector Current

100

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Jedec95 Code

TO-236AB

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Currentcollector Ic Max

100mA

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Polaritychannel Type

PNP

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Seri

QB

Collectoremitter Voltagemax

50V

Number Of Elements

1

Transistor Polarity

PNP

Moduleboard Type

Socket Adapter

For Use Withrelated Products

Renesas MCUs