PDTA114YQCZ

Teknik Özellikler

Package Type

DFN1412D-3

Dc Collectorbase Gain Hfe Min

100 at - 5 mA, - 5 V

RoHS

Details

Maximum Dc Collector Current

100 mA

Part Aliases

934660917147

Frequency Transition

180 MHz

Collector Emitter Voltage Vceo Max

- 50 V

Transistor Polarity

PNP

Pd Power Dissipation

450 mW

Currentcollector Ic Max

100 mA

Kılıf / Paket

3-XDFN Exposed Pad

Continuous Collector Current

- 100 mA

Typical Input Resistor

10 kOhms, 47 kOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements Per Chip

3

Maximum Collector Emitter Voltage

-50 V

Ambalaj

MouseReel

Montaj Tipi

Surface Mount, Wettable Flank

Resistor Base R1

10 kOhms

Montaj Stili

SMD/SMT

Power Max

360 mW

Current Collector Cutoff Max

100nA

Dc Current Gain Hfe Min Ic Vce

100 @ 5mA, 5V

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Fabrika Paket Adedi

5000

Configuration

Single

Voltage Collector Emitter Breakdown Max

50 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Ürün Durumu

Obsolete

Transistor Type

PNP - Pre-Biased

Resistor Emitter Base R2

47 kOhms

Tedarikçi Cihaz Paketi

DFN1412D-3

Typical Resistor Ratio

4.7

Minimum Operating Temperature

- 55 C

Emitter Base Voltage Vebo

- 6 V