Adet bazlı fiyat
- 1+ adet$0.09
- 500+ adet$0.06
- 1000+ adet$0.05
- 2000+ adet$0.05
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 5mA, 5V
- Vce Saturation Max Ib Ic
- 100mV @ 250μA, 5mA
- Resistor Base R1
- 10 kOhms
- Current Collector Cutoff Max
- 100nA
- Power Max
- 340 mW
- Voltage Collector Emitter Breakdown Max
- 50 V
- Fabrika Paket Adedi
- 5000
- Ürün Durumu
- Obsolete
- Transistor Type
- PNP - Pre-Biased
- Resistor Emitter Base R2
- 47 kOhms
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Frequency Transition
- 180 MHz
- Part Aliases
- 934662596147
- Package Type
- DFN1110D-3
- RoHS
- Details
- Maximum Dc Collector Current
- 100 mA
- Number Of Elements Per Chip
- 3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Currentcollector Ic Max
- 100 mA
- Ambalaj
- MouseReel
- Montaj Tipi
- Surface Mount, Wettable Flank
- Maximum Collector Emitter Voltage
- -50 V
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