PDTA114EQC-QZ

Teknik Özellikler

Configuration

Single

Fabrika Paket Adedi

5000

Voltage Collector Emitter Breakdown Max

50 V

Current Collector Cutoff Max

100nA

Power Max

360 mW

Montaj Stili

SMD/SMT

Resistor Base R1

10 kOhms

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA, 5V

Tedarikçi Cihaz Paketi

DFN1412D-3

Typical Resistor Ratio

1

Minimum Operating Temperature

- 55 C

Emitter Base Voltage Vebo

- 10 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Resistor Emitter Base R2

10 kOhms

Ürün Durumu

Active

Transistor Type

PNP - Pre-Biased

Power Dissipation

360mW

Collector Emitter Voltage Vceo Max

- 50 V

Transistor Polarity

Single PNP

Maximum Dc Collector Current

100 mA

RoHS

Details

Dc Collectorbase Gain Hfe Min

30 at - 5 mA, - 5 V

Package Type

DFN1412D-3

Frequency Transition

180 MHz

Part Aliases

934663489147

Seri

Automotive, AEC-Q101

Maximum Collector Emitter Voltage

-50 V

Montaj Tipi

Surface Mount, Wettable Flank

Qualification

AEC-Q101

Ambalaj

MouseReel

Kılıf / Paket

3-XDFN Exposed Pad

Currentcollector Ic Max

100 mA

Pd Power Dissipation

450 mW

Continuous Collector Current

100mA

Typical Input Resistor

10 kOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements Per Chip

3