Adet bazlı fiyat
- 1+ adet$0.49
- 10+ adet$0.46
- 100+ adet$0.44
- 500+ adet$0.41
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Formu
- NO LEAD
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1A 2V
- Reference Standard
- AEC-Q101; IEC-60134
- Power Max
- 370mW
- Seri
- Automotive, AEC-Q101
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Max Breakdown Voltage
- 60V
- RoHS Durumu
- ROHS3 Compliant
- Vce Saturation Max Ib Ic
- 350mV @ 200mA, 2A
- Frequency Transition
- 140MHz
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 370mW
- Fabrika Tedarik Süresi
- 8 Weeks
- Parça Durumu
- Active
- Number Of Elements
- 2
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Jesd30 Code
- S-PDSO-N6
- Case Connection
- COLLECTOR
- Configuration
- SEPARATE, 2 ELEMENTS
- Çalışma Sıcaklığı
- 150°C TJ
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2015
- Transistor Application
- SWITCHING
- Montaj
- Surface Mount
- Max Collector Current
- 2A
- Transistor Type
- 2 NPN (Dual)
- Terminal Sayısı
- 6
- Current Collector Cutoff Max
- 100nA ICBO
- Transition Frequency
- 140MHz
- Collector Emitter Voltage Vceo
- 350mV
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