Adet bazlı fiyat
- 1+ adet$0.77
- 10+ adet$0.73
- 100+ adet$0.69
- 500+ adet$0.65
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Yükseklik
- 6.35mm
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Max Power Dissipation
- 2.1W
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Vce Saturation Max Ib Ic
- 300mV @ 400mA, 4A
- Transistor Element Material
- SILICON
- Weight
- 4.535924g
- Case Connection
- COLLECTOR
- Polaritychannel Type
- PNP
- Collectoremitter Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 12.7mm
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 2.1W
- Kılıf / Paket
- TO-243AA
- Terminal Formu
- FLAT
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 2A 2V
- Temel Parça No
- PBSS306P
- Hfemin
- 200
- Max Breakdown Voltage
- 100V
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- PNP
- Pin Sayısı
- 3
- Max Collector Current
- 3.7A
- Current Collector Cutoff Max
- 100nA ICBO
- Transition Frequency
- 100MHz
- Collector Emitter Voltage Vceo
- 100V
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 100MHz
- Collector Base Voltage Vcbo
- 100V
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Genişlik
- 6.35mm
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