PBLS6021D,115

Teknik Özellikler

Dc Current Gain Hfe Min Ic Vce

30 @ 20mA 5V / 140 @ 1A 2V

Fabrika Tedarik Süresi

4 Weeks

Yayın Yılı

2009

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Yüzey Montaj

YES

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Transistor Type

1 NPN Pre-Biased, 1 PNP

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Jesd30 Code

R-PDSO-G6

Power Max

760mW

Terminal Formu

GULL WING

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Currentcollector Ic Max

100mA 1.5A

Frequency Transition

150MHz

Transistor Element Material

SILICON

Resistor Base R1

2.2k Ω

Number Of Elements

2

Polaritychannel Type

NPN AND PNP

Resistor Emitter Base R2

2.2k Ω

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Kaplaması

Tin (Sn)

Voltage Collector Emitter Breakdown Max

50V 60V

Montaj Tipi

Surface Mount

Kılıf / Paket

SC-74, SOT-457

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Current Collector Cutoff Max

1μA 100nA

Pin Sayısı

6