PBLS6005D,115

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 340mV @ 100mA, 1A

Terminal Formu

GULL WING

Power Max

600mW

Terminal Sayısı

6

Jesd30 Code

R-PDSO-G6

Tepe Reflow Sıcaklığı (°C)

260

Transistor Type

1 NPN Pre-Biased, 1 PNP

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Transistor Application

SWITCHING

Operating Temperature Max

150°C

Ambalaj

Tape & Reel (TR)

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Yayın Yılı

2009

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

4 Weeks

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 5V / 150 @ 500mA 5V

Qualification Status

Not Qualified

Transition Frequency

185MHz

Pin Sayısı

6

Current Collector Cutoff Max

1μA 100nA

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

40

Kılıf / Paket

SC-74, SOT-457

Montaj Tipi

Surface Mount

Voltage Collector Emitter Breakdown Max

50V 60V

Terminal Kaplaması

Tin (Sn)

Temel Parça No

PBLS6005

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor Emitter Base R2

47k Ω

Polaritychannel Type

PNP

Number Of Elements

2

Resistor Base R1

47k Ω

Transistor Element Material

SILICON

Frequency Transition

185MHz

Currentcollector Ic Max

100mA 700mA