Adet bazlı fiyat
- 1+ adet$0.55
- 10+ adet$0.52
- 100+ adet$0.49
- 500+ adet$0.46
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Max Power Dissipation
- 325mW
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 200mA 10V
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2015
- Fabrika Tedarik Süresi
- 4 Weeks
- Collector Emitter Voltage Vceo
- 100mV
- Terminal Sayısı
- 3
- Jesd30 Code
- R-PDSO-N3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- 150°C TJ
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Transistor Type
- PNP
- Vce Saturation Max Ib Ic
- 100mV @ 5mA, 50mA
- Terminal Formu
- NO LEAD
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 150V
- Power Max
- 325mW
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Polaritychannel Type
- PNP
- Reference Standard
- AEC-Q101; IEC-60134
- Frequency Transition
- 75MHz
- Montaj Tipi
- Surface Mount
- Seri
- Automotive, AEC-Q101
- Configuration
- SINGLE
- Terminal Pozisyonu
- DUAL
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Max Breakdown Voltage
- 150V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Pin Sayısı
- 3
- Max Collector Current
- 500mA
- Case Connection
- COLLECTOR
- Transition Frequency
- 75MHz
- Current Collector Cutoff Max
- 100nA
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