NX7002BKXBZ

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Pin Sayısı

6

Terminal Sayısı

6

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

23.6pF @ 10V

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

Reference Standard

IEC-60134

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-N6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Fabrika Tedarik Süresi

4 Weeks

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

2.1V @ 250μA

Terminal Formu

NO LEAD

Ambalaj

Cut Tape (CT)

Çalışma Sıcaklığı

-55°C~150°C TJ

Max Power Dissipation

285mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection

DRAIN

Continuous Drain Current Id

260mA

Yayın Yılı

2015

Drain Currentmax Abs Id

0.33A

Kılıf / Paket

6-XFDFN Exposed Pad

Gate Charge Qg Max Vgs

1nC @ 10V

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

2.8 Ω @ 200mA, 10V

Drainsource On Resistancemax

3.2Ohm

Additional Feature

LOGIC LEVEL COMPATIBLE

Drain To Source Voltage Vdss

60V

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Power Max

285mW