NX3020NAKV,115

Teknik Özellikler

Kılıf / Paket

SOT-563, SOT-666

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Yüzey Montaj

YES

Pin Sayısı

6

Terminal Formu

GULL WING

Vgsth Max Id

1.5V @ 250μA

Power Max

375mW

Max Dual Supply Voltage

30V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

5 ns

Pin Sayısı

6

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

0.44nC @ 4.5V

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Rds On Max Id Vgs

4.5 Ω @ 100mA, 10V

Drain To Source Breakdown Voltage

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

4 Weeks

Input Capacitance Ciss Max Vds

13pF @ 10V

Max Power Dissipation

375mW

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Transistor Application

SWITCHING

Number Of Channels

2

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

6

Gate To Source Voltage Vgs

1.2V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

5ns

Continuous Drain Current Id

200mA

Fall Time Typ

17 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Logic Level Gate

Element Configuration

Dual

Turn Off Delay Time

34 ns