NX3020NAKS,115

Teknik Özellikler

Yüzey Montaj

YES

Power Dissipation

375mW

Pin Sayısı

6

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

4.5 Ω @ 100mA, 10V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Max Dual Supply Voltage

30V

Terminal Formu

GULL WING

Vgsth Max Id

1.5V @ 250μA

Gate Charge Qg Max Vgs

0.44nC @ 4.5V

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

5 ns

Pin Sayısı

6

Kurşunsuz

Lead Free

Number Of Elements

2

Max Power Dissipation

375mW

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

13pF @ 10V

Fabrika Tedarik Süresi

4 Weeks

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Fall Time Typ

17 ns

Turn Off Delay Time

34 ns

Drain Currentmax Abs Id

0.18A

Element Configuration

Dual

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Terminal Sayısı

6

Fet Type

2 N-Channel (Dual)

Number Of Channels

2

Continuous Drain Current Id

180mA

Rise Time

5ns