NX3008NBKV,115

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Terminal Formu

FLAT

Vgsth Max Id

1.1V @ 250μA

Power Max

500mW

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

0.68nC @ 4.5V

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

400mA

Reference Standard

AEC-Q101; IEC-60134

Rds On Max Id Vgs

1.4 Ω @ 350mA, 4.5V

Jesd30 Code

R-PDSO-F6

JESD-609 Kodu

e3

Kılıf / Paket

SOT-563, SOT-666

Transistor Element Material

SILICON

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101, TrenchMOS™

Pin Sayısı

6

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Drain Currentmax Abs Id

0.4A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

0.39W

Input Capacitance Ciss Max Vds

50pF @ 15V

Fabrika Tedarik Süresi

4 Weeks

Number Of Elements

2

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)