NX138BKSF

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Rds On Max Id Vgs

3.5 Ω @ 200mA, 10V

Terminal Sayısı

6

Reference Standard

AEC-Q101; IEC-60134

Fet Feature

Standard

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G6

Drain Currentmax Abs Id

0.21A

Yüzey Montaj

YES

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual)

Power Max

860mW

Channel Type

Dual N

Current Continuous Drain Id25

330mA Tc

Fabrika Tedarik Süresi

4 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

20pF @ 30V

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Vgsth Max Id

1.5V @ 250μA

Gate Charge Qg Max Vgs

0.7nC @ 10V

Pin Sayısı

6

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

60V