NHUMB1F

Teknik Özellikler

Ürün Durumu

Active

Currentcollector Ic Max

100mA

Gain Bandwidth Product Ft

150 MHz

Pd Power Dissipation

235 mW

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

6-TSSOP

RoHS

Details

Voltage Collector Emitter Breakdown Max

80V

Collector Base Voltage Vcbo

80 V

Emitter Base Voltage Vebo

10 V

Qualification

AEC-Q101

Transistor Polarity

PNP

Dc Current Gain Hfe Max

10

Resistor Base R1

22kOhms

Configuration

Dual

Collectoremitter Saturation Voltage

100 mV

Technology

Si

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Type

2 PNP - Pre-Biased (Dual)

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

70 @ 10mA, 5V

Ürün Tipi

BJTs - Bipolar Transistors

Resistor Emitter Base R2

22kOhms

Current Collector Cutoff Max

100nA

Dc Collectorbase Gain Hfe Min

- 60

Collector Emitter Voltage Vceo Max

80 V

Fabrika Paket Adedi

10000

Power Max

235mW

Part Aliases

934661424135

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Ambalaj

MouseReel

Frequency Transition

150MHz

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount