NHUMB10X

Teknik Özellikler

Collector Emitter Voltage Vceo Max

80 V

Fabrika Paket Adedi

3000

Power Max

350mW

Ambalaj

MouseReel

Frequency Transition

150MHz

Montaj Tipi

Surface Mount

Montaj Stili

SMD/SMT

Part Aliases

934661423115

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Maks. Çalışma Sıcaklığı

+ 150 C

Collectoremitter Saturation Voltage

100 mV

Temel Ürün No

NHUMB10

Resistor Emitter Base R2

47kOhms

Current Collector Cutoff Max

100nA

Transistor Type

2 PNP - Pre-Biased (Dual)

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA, 5V

Ürün Tipi

BJTs - Bipolar Transistors

Qualification

AEC-Q101

Collector Base Voltage Vcbo

80 V

Emitter Base Voltage Vebo

7 V

Power Dissipation

350mW

Configuration

Dual

Maximum Dc Collector Current

100 mA

Transistor Polarity

Dual PNP

Resistor Base R1

2.2kOhms

Gain Bandwidth Product Ft

150 MHz

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

350 mW

Tedarikçi Cihaz Paketi

6-TSSOP

Continuous Collector Current

100mA

Ürün Durumu

Active

Currentcollector Ic Max

100mA

Msl

MSL 1 - Unlimited

Voltage Collector Emitter Breakdown Max

80V

RoHS

Details