BUK9K5R6-30EX

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

169 mJ

Pulsed Drain Currentmax Idm

305A

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.0058Ohm

Pin Sayısı

8

Case Connection

DRAIN

Jesd30 Code

R-PDSO-G6

Transistor Application

SWITCHING

Pin Sayısı

4

Fet Feature

Logic Level Gate

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Terminal Sayısı

6

Max Power Dissipation

64W

Fabrika Tedarik Süresi

12 Weeks

Power Max

64W

Gate Charge Qg Max Vgs

22.6nC @ 5V

Montaj

Surface Mount

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.1V @ 1mA

Transistor Element Material

SILICON

Yayın Yılı

2015

Terminal Formu

GULL WING

Continuous Drain Current Id

40A

Drain To Source Voltage Vdss

30V

Rds On Max Id Vgs

5.8m Ω @ 10A, 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

30V

Input Capacitance Ciss Max Vds

2480pF @ 25V