BUK9K45-100E,115

Teknik Özellikler

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.1V @ 1mA

Parça Durumu

Active

Yayın Yılı

2013

Power Dissipation

53W

Transistor Element Material

SILICON

Element Configuration

Dual

Turn On Delay Time

4 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Continuous Drain Current Id

21A

Rds On Max Id Vgs

42m Ω @ 5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Input Capacitance Ciss Max Vds

2152pF @ 25V

Number Of Channels

2

Fall Time Typ

27.75 ns

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Contact Plating

Tin

Seri

Automotive, AEC-Q101, TrenchMOS™

Number Of Elements

2

Terminal Sayısı

6

Max Power Dissipation

53W

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

33.5nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Jesd30 Code

R-PDSO-G6

Pin Sayısı

8

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

10V

Reference Standard

AEC-Q101; IEC-60134

Max Dual Supply Voltage

100V

Turn Off Delay Time

41.34 ns