BUK9K13-60EX

Teknik Özellikler

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Power Max

64W

Fabrika Tedarik Süresi

12 Weeks

Max Power Dissipation

64W

Gate Charge Qg Max Vgs

22.4nC @ 5V

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Sayısı

6

Yayın Yılı

2013

Transistor Element Material

SILICON

Montaj

Surface Mount

Vgsth Max Id

2.1V @ 1mA

Fet Type

2 N-Channel (Dual)

Parça Durumu

Active

Rds On Max Id Vgs

12.5m Ω @ 10A, 5V

Input Capacitance Ciss Max Vds

2953pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

60V

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Continuous Drain Current Id

40A

Reference Standard

AEC-Q101; IEC-60134

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0125Ohm

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

190A

Jesd30 Code

R-PDSO-G6

Pin Sayısı

8

Transistor Application

SWITCHING

Case Connection

DRAIN

Fet Feature

Logic Level Gate