BUK9K134-100EX

Teknik Özellikler

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

12.6 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.159Ohm

Pin Sayısı

8

Pulsed Drain Currentmax Idm

34A

Jesd30 Code

R-PDSO-G6

Transistor Application

SWITCHING

Pin Sayısı

8

Case Connection

DRAIN

Kurşunsuz

Lead Free

Fet Feature

Logic Level Gate

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Power Max

32W

Fabrika Tedarik Süresi

12 Weeks

Max Power Dissipation

32W

Gate Charge Qg Max Vgs

7.4nC @ 5V

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Sayısı

6

Transistor Element Material

SILICON

Yayın Yılı

2013

Montaj

Surface Mount

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.1V @ 1mA

Rds On Max Id Vgs

159m Ω @ 5A, 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

100V

Input Capacitance Ciss Max Vds

755pF @ 25V

Terminal Formu

GULL WING

Continuous Drain Current Id

8.5A

Drain To Source Voltage Vdss

100V