BUK7K89-100EX

Teknik Özellikler

Gate Charge Qg Max Vgs

13.6nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Power Max

38W

Max Power Dissipation

38W

Terminal Sayısı

6

Number Of Elements

2

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1205, 8-LFPAK56

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

100V

Input Capacitance Ciss Max Vds

811pF @ 25V

Rds On Max Id Vgs

82.5m Ω @ 5A, 10V

Continuous Drain Current Id

13A

Drain To Source Voltage Vdss

100V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Yayın Yılı

2015

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

4V @ 1mA

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

51A

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

19.5 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Standard

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Pin Sayısı

8

Jesd30 Code

R-PDSO-G6

Case Connection

DRAIN