BUK7K52-60EX

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Max Power Dissipation

32W

Gate Charge Qg Max Vgs

9.2nC @ 10V

Number Of Elements

2

Terminal Sayısı

6

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Number Of Channels

2

Fall Time Typ

5.4 ns

Rds On Max Id Vgs

45m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

535pF @ 25V

Ds Breakdown Voltagemin

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

4.3 ns

Terminal Formu

GULL WING

Continuous Drain Current Id

15.4A

Drain To Source Voltage Vdss

60V

Transistor Element Material

SILICON

Yayın Yılı

2013

Element Configuration

Dual

Montaj

Surface Mount

Parça Durumu

Active

Vgsth Max Id

4V @ 1mA

Fet Type

2 N-Channel (Dual)

Operating Mode

ENHANCEMENT MODE

Rise Time

5.1ns

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.045Ohm

Pin Sayısı

8

Turn Off Delay Time

8.4 ns

Pulsed Drain Currentmax Idm

71A

Gate To Source Voltage Vgs

20V

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

11.6 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Standard