BST52,135

Teknik Özellikler

Power Max

1.3W

Transition Frequency

200MHz

Yayın Yılı

2001

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

150°C TJ

Polarity

NPN

Emitter Base Voltage Vebo

5V

Montaj

Surface Mount

Case Connection

COLLECTOR

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Collector Emitter Voltage Vceo

80V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

4 Weeks

Transistor Type

NPN - Darlington

Frequency Transition

200MHz

Number Of Elements

1

Temel Parça No

BST52

Terminal Formu

FLAT

Pin Sayısı

3

ECCN Kodu

EAR99

Max Collector Current

1A

Transistor Application

SWITCHING

Dc Current Gain Hfe Min Ic Vce

2000 @ 500mA 10V

Turn On Timemax Ton

400ns

Max Breakdown Voltage

80V

Collectoremitter Breakdown Voltage

80V

JESD-609 Kodu

e3

Max Power Dissipation

1.3W

Collectoremitter Saturation Voltage

1.3V

Seri

Automotive, AEC-Q101

Current Collector Cutoff Max

500nA

Vce Saturation Max Ib Ic

1.3V @ 500μA, 500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Kılıf / Paket

TO-243AA