BSS138BKS,115

Teknik Özellikler

Current Continuous Drain Id25

320mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

LOGIC LEVEL COMPATIBLE

Rds On Max Id Vgs

1.6 Ω @ 320mA, 10V

Drain To Source Voltage Vdss

60V

Terminal Formu

GULL WING

Power Max

445mW

Input Capacitance Ciss Max Vds

56pF @ 10V

Montaj Tipi

Surface Mount

Seri

Automotive, AEC-Q101, TrenchMOS™

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Vgsth Max Id

1.6V @ 250μA

Terminal Sayısı

6

Yayın Yılı

2002

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

60V

Fabrika Tedarik Süresi

4 Weeks

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

2 N-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G6

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

0.32A

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Pin Sayısı

6