Adet bazlı fiyat
- 1+ adet$0.39
- 10+ adet$0.37
- 100+ adet$0.35
- 500+ adet$0.33
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Max
- 1W
- Transistor Type
- PNP
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 1.35W
- Current Collector Cutoff Max
- 100nA ICBO
- Number Of Elements
- 1
- Max Collector Current
- 1A
- Transition Frequency
- 145MHz
- Yayın Yılı
- 2011
- Transistor Application
- SWITCHING
- Max Breakdown Voltage
- 80V
- Kılıf / Paket
- TO-261-4, TO-261AA
- Max Power Dissipation
- 1W
- Terminal Formu
- GULL WING
- Collectoremitter Breakdown Voltage
- 80V
- Frekans
- 145MHz
- RoHS Durumu
- ROHS3 Compliant
- Terminal Pozisyonu
- DUAL
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Gain Bandwidth Product
- 145MHz
- Case Connection
- COLLECTOR
- Temel Parça No
- BCP53
- Fabrika Tedarik Süresi
- 4 Weeks
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- Element Configuration
- Single
- Montaj
- Surface Mount
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Tin (Sn)
- Tepe Reflow Süresi (maks. sn)
- 40
- Collector Base Voltage Vcbo
- 100V
- Collector Emitter Voltage Vceo
- 80V
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 5V
- Polaritychannel Type
- PNP
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- 150°C TJ
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
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