BCM846BSX

Teknik Özellikler

Transistor Element Material

SILICON

Polaritychannel Type

NPN

Configuration

SEPARATE, 2 ELEMENTS

Emitter Base Voltage Vebo

6V

Fabrika Tedarik Süresi

4 Weeks

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Transistor Type

2 NPN (Dual)

Parça Durumu

Active

Transition Frequency

250MHz

Contact Plating

Tin

Number Of Elements

2

Seri

Automotive, AEC-Q101

Frequency Transition

250MHz

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Reference Standard

AEC-Q101; IEC-60134

Yayın Yılı

2015

Collector Emitter Voltage Vceo

200mV

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V

Collector Base Voltage Vcbo

80V

Pin Sayısı

6

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Power Max

200mW

Çalışma Sıcaklığı

150°C TJ

Collectoremitter Breakdown Voltage

65V

Current Collector Cutoff Max

15nA ICBO

Transistor Application

AMPLIFIER

Vce Saturation Max Ib Ic

200mV @ 500μA, 10mA

Jesd30 Code

R-PDSO-G6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Power Dissipation

200mW

Max Collector Current

100mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj Tipi

Surface Mount