Adet bazlı fiyat
- 1+ adet$0.23
- 10+ adet$0.21
- 100+ adet$0.20
- 500+ adet$0.19
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collectoremitter Saturation Voltage
- 650 mV
- Voltage Collector Emitter Breakdown Max
- 45 V
- Pd Power Dissipation
- 420 mW
- Power Max
- 340 mW
- Montaj Stili
- SMD/SMT
- Current Collector Cutoff Max
- 15nA (ICBO)
- Technology
- Si
- Collector Emitter Voltage Vceo Max
- 45 V
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Power Dissipation
- 420
- Collector Base Voltage Vcbo
- 50 V
- Ürün Durumu
- Active
- Dc Collectorbase Gain Hfe Min
- 125 at 2 mA, 5 V
- Configuration
- Single
- Frequency Transition
- 100MHz
- Dc Current Gain Hfe Max
- 250 at 2 mA, 5 V
- Emitter Base Voltage Vebo
- 5 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Seri
- Automotive, AEC-Q101
- Transistor Type
- PNP
- Ambalaj
- MouseReel
- Continuous Collector Current
- 100
- Qualification
- AEC-Q101
- Minimum Operating Temperature
- - 55 C
- Çalışma Sıcaklığı
- 150°C (TJ)
- Currentcollector Ic Max
- 100 mA
- RoHS
- Details
- Dc Current Gain Hfe Min Ic Vce
- 125 @ 2mA, 5V
- Montaj Tipi
- Surface Mount, Wettable Flank
- Fabrika Paket Adedi
- 5000
- Maximum Dc Collector Current
- 200 mA
- Transistor Polarity
- PNP
- Transition Frequency
- 100
- Paket
- Tape & Reel (TR)
- Part Aliases
- 934662712147
- Gain Bandwidth Product Ft
- 100 MHz
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Ürün Tipi
- BJTs - Bipolar Transistors
- Tedarikçi Cihaz Paketi
- DFN1110D-3
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