BC856BS,115

Teknik Özellikler

Transistor Application

SWITCHING

Current Collector Cutoff Max

15nA ICBO

Gain Bandwidth Product

100MHz

Radyasyon Dayanımı

No

Forward Voltage

410mV

Transistor Element Material

SILICON

Collectoremitter Breakdown Voltage

65V

Power Dissipation

300mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Forward Surge Current Ifsm

100mA

Collector Base Voltage Vcbo

80V

Kurşunsuz

Lead Free

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Transistor Type

2 PNP (Dual)

JESD-609 Kodu

e3

Parça Durumu

Active

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Yayın Yılı

2009

Frekans

100MHz

Max Breakdown Voltage

65V

Vce Saturation Max Ib Ic

300mV @ 5mA, 100mA

Fabrika Tedarik Süresi

4 Weeks

Jesd30 Code

R-PDSO-G6

Reach Svhc

No SVHC

Max Collector Current

100mA

Terminal Formu

GULL WING

Contact Plating

Tin

ECCN Kodu

EAR99

Max Power Dissipation

300mW

Emitter Base Voltage Vebo

6V

Polarity

NPN, PNP

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Surface Mount

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Seri

Automotive, AEC-Q101

Pin Sayısı

6