Adet bazlı fiyat
- 1+ adet$0.18
- 10+ adet$0.17
- 100+ adet$0.16
- 500+ adet$0.15
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Configuration
- Single
- Dc Collectorbase Gain Hfe Min
- 220
- Ürün Durumu
- Active
- Collector Base Voltage Vcbo
- 80 V
- Power Dissipation
- 450mW
- Emitter Base Voltage Vebo
- 6 V
- Frequency Transition
- 100MHz
- Voltage Collector Emitter Breakdown Max
- 65 V
- Pd Power Dissipation
- 450 mW
- Collectoremitter Saturation Voltage
- 650 mV
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage Vceo Max
- 65 V
- Package Type
- SOT8009
- Technology
- Si
- Montaj Stili
- SMD/SMT
- Current Collector Cutoff Max
- 15nA (ICBO)
- Power Max
- 360 mW
- Gain Bandwidth Product Ft
- 100 MHz
- Transition Frequency
- 100MHz
- Maximum Collector Emitter Voltage
- 65 V
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Continuous Collector Current
- 100mA
- Seri
- BC856xQC
- Transistor Type
- PNP
- Maks. Çalışma Sıcaklığı
- + 150 C
- Maximum Dc Collector Current
- 100 mA
- Transistor Polarity
- PNP
- Montaj Tipi
- Surface Mount, Wettable Flank
- Dc Current Gain Hfe Min Ic Vce
- 220 @ 2mA, 5V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Currentcollector Ic Max
- 100 mA
- Minimum Dc Current Gain
- 220
- Minimum Operating Temperature
- - 55 C
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