BC847QASZ

Teknik Özellikler

Configuration

SEPARATE, 2 ELEMENTS

Collector Base Voltage Vcbo

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Emitter Base Voltage Vebo

6V

Frequency Transition

100MHz

Max Power Dissipation

350mW

Collectoremitter Breakdown Voltage

45V

Contact Plating

Tin

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-N6

Fabrika Tedarik Süresi

4 Weeks

Vce Saturation Max Ib Ic

300mV @ 5mA, 100mA

Max Collector Current

100mA

Current Collector Cutoff Max

15nA ICBO

Transistor Application

SWITCHING

Reference Standard

AEC-Q101; IEC-60134

Power Max

350mW

Max Breakdown Voltage

45V

Polaritychannel Type

NPN

Transition Frequency

100MHz

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2015

Terminal Sayısı

6

Kılıf / Paket

6-XFDFN Exposed Pad

Collector Emitter Voltage Vceo

300mV

Parça Durumu

Active

Ambalaj

Cut Tape (CT)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

COLLECTOR

Number Of Elements

2

Pin Sayısı

6

Transistor Type

2 NPN (Dual)

Seri

Automotive, AEC-Q101

Montaj

Surface Mount

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ