Adet bazlı fiyat
- 1+ adet$0.23
- 10+ adet$0.22
- 100+ adet$0.21
- 500+ adet$0.19
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 110 @ 2mA, 5V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Seri
- Automotive, AEC-Q101
- Current Collector Cutoff Max
- 15nA (ICBO)
- Emitter Base Voltage Vebo
- 6 V
- Collector Base Voltage Vcbo
- 80 V
- Minimum Operating Temperature
- - 55 C
- Technology
- Si
- Pd Power Dissipation
- 420 mW
- Configuration
- Single
- Montaj Stili
- SMD/SMT
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Gain Bandwidth Product Ft
- 100 MHz
- Currentcollector Ic Max
- 100 mA
- Continuous Collector Current
- 100 mA
- Ürün Tipi
- BJTs - Bipolar Transistors
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 100mA
- Paket
- Tape & Reel (TR)
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Dc Current Gain Hfe Max
- 220 at 2 mA, 5 V
- RoHS
- Details
- Çalışma Sıcaklığı
- 150°C (TJ)
- Fabrika Paket Adedi
- 5000
- Transistor Polarity
- NPN
- Montaj Tipi
- Surface Mount, Wettable Flank
- Collector Emitter Voltage Vceo Max
- 65 V
- Transistor Type
- NPN
- Maximum Dc Collector Current
- 200 mA
- Part Aliases
- 934664017147
- Collectoremitter Saturation Voltage
- 400 mV
- Ürün Durumu
- Active
- Frequency Transition
- 100MHz
- Dc Collectorbase Gain Hfe Min
- 110 at 2 mA, 5 V
- Ambalaj
- MouseReel
- Power Max
- 340 mW
- Voltage Collector Emitter Breakdown Max
- 65 V
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