Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collectoremitter Saturation Voltage
- 700 mV
- Transistor Type
- NPN
- Qualification
- AEC-Q101
- Voltage Collector Emitter Breakdown Max
- 45 V
- Frequency Transition
- 100MHz
- Ambalaj
- MouseReel
- Continuous Collector Current
- 500
- Pd Power Dissipation
- 460 mW
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Power Max
- 350 mW
- Paket
- Tape & Reel (TR)
- Dc Collectorbase Gain Hfe Min
- 250 at 100 mA, 1 V
- RoHS
- Details
- Current Collector Cutoff Max
- 100nA (ICBO)
- Maximum Dc Collector Current
- 1 A
- Currentcollector Ic Max
- 500 mA
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Gain Bandwidth Product Ft
- 100 MHz
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 100mA, 1V
- Dc Current Gain Hfe Max
- 600 at 100 mA, 1 V
- Seri
- Automotive, AEC-Q101
- Configuration
- Single
- Montaj Stili
- SMD/SMT
- Montaj Tipi
- Surface Mount, Wettable Flank
- Part Aliases
- 934662686147
- Ürün Durumu
- Active
- Power Dissipation
- 460
- Ürün Tipi
- BJTs - Bipolar Transistors
- Technology
- Si
- Transition Frequency
- 100
- Transistor Polarity
- NPN
- Çalışma Sıcaklığı
- 150°C (TJ)
- Collector Emitter Voltage Vceo Max
- 45 V
- Emitter Base Voltage Vebo
- 5 V
- Fabrika Paket Adedi
- 5000
- Collector Base Voltage Vcbo
- 50 V
- Minimum Operating Temperature
- - 55 C
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