Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Collectorbase Gain Hfe Min
- 100
- Power Max
- 380 mW
- RoHS
- Details
- Currentcollector Ic Max
- 500 mA
- Maximum Dc Collector Current
- 500 mA
- Current Collector Cutoff Max
- 100nA (ICBO)
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Package Type
- DFN1412D-3
- Dc Current Gain Hfe Max
- 250
- Gain Bandwidth Product Ft
- 100 MHz
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA, 1V
- Transistor Type
- PNP
- Collectoremitter Saturation Voltage
- 700 mV
- Qualification
- AEC-Q101
- Continuous Collector Current
- 500mA
- Ambalaj
- MouseReel
- Frequency Transition
- 80MHz
- Voltage Collector Emitter Breakdown Max
- 45 V
- Minimum Dc Current Gain
- 100
- Pd Power Dissipation
- 380 mW
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Ürün Durumu
- Active
- Ürün Tipi
- BJTs - Bipolar Transistors
- Power Dissipation
- 480mW
- Transition Frequency
- 80MHz
- Technology
- Si
- Transistor Polarity
- PNP
- Emitter Base Voltage Vebo
- 5 V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Collector Emitter Voltage Vceo Max
- 45 V
- Msl
- MSL 1 - Unlimited
- Fabrika Paket Adedi
- 5000
- Minimum Operating Temperature
- - 65 C
- Collector Base Voltage Vcbo
- 50 V
- Seri
- Automotive, AEC-Q101
- Configuration
- Single
- Maximum Collector Emitter Voltage
- 45 V
- Montaj Stili
- SMD/SMT
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