Adet bazlı fiyat
- 1+ adet$0.33
- 10+ adet$0.31
- 100+ adet$0.30
- 500+ adet$0.28
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Terminal Formu
- NO LEAD
- Power Max
- 420mW
- Max Collector Current
- 2A
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Current Collector Cutoff Max
- 100nA ICBO
- Kılıf / Paket
- 3-UDFN Exposed Pad
- Case Connection
- COLLECTOR
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 85 @ 500mA 1V
- Transistor Type
- NPN
- Contact Plating
- Tin
- Reference Standard
- AEC-Q101; IEC-60134
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- Frequency Transition
- 170MHz
- Yayın Yılı
- 2014
- Ambalaj
- Cut Tape (CT)
- Polaritychannel Type
- NPN
- Max Power Dissipation
- 420mW
- Vce Saturation Max Ib Ic
- 600mV @ 200mA, 2A
- Jesd30 Code
- S-PDSO-N3
- Collectoremitter Breakdown Voltage
- 20V
- Number Of Elements
- 1
- Max Breakdown Voltage
- 20V
- Transition Frequency
- 170MHz
- Emitter Base Voltage Vebo
- 5V
- Çalışma Sıcaklığı
- 150°C TJ
- Parça Durumu
- Discontinued
- Collector Base Voltage Vcbo
- 32V
- Collector Emitter Voltage Vceo
- 600mV
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Montaj
- Surface Mount
- Configuration
- SINGLE
- Montaj Tipi
- Surface Mount
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 16 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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