Adet bazlı fiyat
- 1+ adet$0.23
- 10+ adet$0.21
- 100+ adet$0.20
- 500+ adet$0.19
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collectoremitter Saturation Voltage
- 500mV
- Collectoremitter Breakdown Voltage
- 80V
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Collector Emitter Voltage Vceo
- 80V
- Max Power Dissipation
- 1.65W
- Max Collector Current
- 1A
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 1.65W
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Case Connection
- COLLECTOR
- Pin Sayısı
- 3
- Current Collector Cutoff Max
- 100nA ICBO
- Max Breakdown Voltage
- 80V
- Transition Frequency
- 180MHz
- Montaj
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 100V
- Frekans
- 180MHz
- Montaj Tipi
- Surface Mount
- Transistor Application
- SWITCHING
- Hfemin
- 100
- Pin Sayısı
- 3
- Polaritychannel Type
- NPN
- Contact Plating
- Tin
- Emitter Base Voltage Vebo
- 5V
- Çalışma Sıcaklığı
- 150°C TJ
- Gain Bandwidth Product
- 180MHz
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 8 Weeks
- Kılıf / Paket
- 3-PowerUDFN
- Power Max
- 420mW
- Yayın Yılı
- 2011
- Dc Current Gain Hfe Min Ic Vce
- 63 @ 150mA 2V
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
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