Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Max Breakdown Voltage
- 80V
- Current Collector Cutoff Max
- 100nA ICBO
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Case Connection
- COLLECTOR
- Collector Base Voltage Vcbo
- 100V
- Frequency Transition
- 145MHz
- Transition Frequency
- 145MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Collectoremitter Breakdown Voltage
- 80V
- Configuration
- SINGLE
- Max Power Dissipation
- 420mW
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Collector Current
- 1A
- Ambalaj
- Cut Tape (CT)
- Collector Emitter Voltage Vceo
- 500mV
- Yayın Yılı
- 2014
- Dc Current Gain Hfe Min Ic Vce
- 63 @ 150mA 2V
- Power Max
- 420mW
- Kılıf / Paket
- 3-UDFN Exposed Pad
- Jesd30 Code
- S-PDSO-N3
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Transistor Type
- PNP
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Contact Plating
- Tin
- Polaritychannel Type
- PNP
- Reference Standard
- AEC-Q101; IEC-60134
- Terminal Formu
- NO LEAD
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 8 Weeks
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 5V
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